Concept: Zinc oxide
In recent years, zinc oxide (ZnO) has become one of the most popular research materials due to its unique properties and various applications. ZnO is an intrinsic semiconductor, with a wide bandgap (3.37 eV) and large exciton binding energy (60 meV) making it suitable for many optical applications. In this experiment, the simple hydrothermal method is used to grow indium-doped ZnO nanostructures on a silicon wafer, which are then annealed at different temperatures (400°C to 1,000°C) in an abundant oxygen atmosphere. This study discusses the surface structure and optical characteristic of ZnO nanomaterials. The structure of the ZnO nanostructures is analyzed by X-ray diffraction, the superficial state by scanning electron microscopy, and the optical measurements which are carried out using the temperature-dependent photoluminescence (PL) spectra. In this study, we discuss the broad peak energy of the yellow-orange emission which shows tendency towards a blueshift with the temperature increase in the PL spectra. This differs from other common semiconductors which have an increase in their peak energy of deep-level emission along with measurement temperature.
Highly efficient room-temperature ultraviolet (UV) luminescence is obtained in heterostructures consisting of 10-nm-thick ultrathin ZnO films grown on Si nanopillars fabricated using self-assembled silver nanoislands as a natural metal nanomask during a subsequent dry etching process. Atomic layer deposition was applied for depositing the ZnO films on the Si nanopillars under an ambient temperature of 200°C. Based on measurements of photoluminescence (PL), an intensive UV emission corresponding to free-exciton recombination (approximately 3.31 eV) was observed with a nearly complete suppression of the defect-associated, broad-range visible emission peak. As compared to the ZnO/Si substrate, the almost five-times-of-magnitude enhancement in the intensity of PL, which peaked around 3.31 eV in the present ultrathin ZnO/Si nanopillars, is presumably attributed to the high surface/volume ratio inherent to the Si nanopillars. This allowed considerably more amount of ZnO material to be grown on the template and led to markedly more efficient intrinsic emission.
We report the growth and characterization of ZnO/ZnTe core/shell nanowire arrays on indium tin oxide. Coating of the ZnTe layer on well-aligned vertical ZnO nanowires has been demonstrated by scanning electron microscope, tunneling electron microscope, X-ray diffraction pattern, photoluminescence, and transmission studies. The ZnO/ZnTe core/shell nanowire arrays were then used as the active layer and carrier transport medium to fabricate a photovoltaic device. The enhanced photocurrent and faster response observed in ZnO/ZnTe, together with the quenching of the UV emission in the PL spectra, indicate that carrier separation in this structure plays an important role in determining their optical response. The results also indicate that core/shell structures can be made into useful photovoltaic devices.
In this study, zinc oxide (ZnO) nanorod arrays were synthesized using a simple hydrothermal reaction on ZnO seeds/n-silicon substrate. Several parameters were studied, including the heat-treatment temperature to produce ZnO seeds, zinc nitrate concentration, pH of hydrothermal reaction solution, and hydrothermal reaction time. The optimum heat-treatment temperature to produce uniform nanosized ZnO seeds was 400°C. The nanorod dimensions depended on the hydrothermal reaction parameters. The optimum hydrothermal reaction parameters to produce blunt tip-like nanorods (770 nm long and 80 nm in top diameter) were 0.1 M zinc nitrate, pH 7, and 4 h of growth duration. Phase analysis studies showed that all ZnO nanorods exhibited a strong (002) peak. Thus, the ZnO nanorods grew in a c-axis preferred orientation. A strong ultraviolet (UV) emission peak was observed for ZnO nanorods grown under optimized parameters with a low, deep-level emission peak, which indicated high optical property and crystallinity of the nanorods. The produced ZnO nanorods were also tested for their UV-sensing properties. All samples responded to UV light but with different sensing characteristics. Such different responses could be attributed to the high surface-to-volume ratio of the nanorods that correlated with the final ZnO nanorods morphology formed at different synthesis parameters. The sample grown using optimum synthesis parameters showed the highest responsivity of 0.024 A/W for UV light at 375 nm under a 3 V bias.
We have investigated the influences of aluminum and gallium dopants (0 to 2.0 mol%) on zinc oxide (ZnO) thin films regarding crystallization and electrical and optical properties for application in transparent conducting oxide devices. Al- and Ga-doped ZnO thin films were deposited on glass substrates (corning 1737) by sol–gel spin-coating process. As a starting material, AlCl3.6H2O, Ga(NO3)2, and Zn(CH3COO)2.2H2O were used. A lowest sheet resistance of 3.3 x 103 [greek capital letter omega]/[white square] was obtained for the GZO thin film doped with 1.5 mol% of Ga after post-annealing at 650 [degree sign]C for 60 min in air. All the films showed more than 85 % transparency in the visible region. We have studied the structural and microstructural properties as a function of Al and Ga concentrations through X-ray diffraction and scanning electron microscopy analysis. In addition, the optical bandgap and photoluminescence were estimated.
In this study, the authors report the production of nanocomposite-enhanced phase-change materials (NEPCMs) using the direct-synthesis method by mixing paraffin with alumina (Al2O3), titania (TiO2), silica (SiO2), and zinc oxide (ZnO) as the experimental samples. Al2O3, TiO2, SiO2, and ZnO were dispersed into three concentrations of 1.0, 2.0, and 3.0 wt.%. Through heat conduction and differential scanning calorimeter experiments to evaluate the effects of varying concentrations of the nano-additives on the heat conduction performance and thermal storage characteristics of NEPCMs, their feasibility for use in thermal storage was determined. The experimental results demonstrate that TiO2 is more effective than the other additives in enhancing both the heat conduction and thermal storage performance of paraffin for most of the experimental parameters. Furthermore, TiO2 reduces the melting onset temperature and increases the solidification onset temperature of paraffin. This allows the phase-change heat to be applicable to a wider temperature range, and the highest decreased ratio of phase-change heat is only 0.46%, compared to that of paraffin. Therefore, this study demonstrates that TiO2, added to paraffin to form NEPCMs, has significant potential for enhancing the thermal storage characteristics of paraffin.
This work presents a novel white light device. An yttrium aluminum garnet (YAG) phosphor-incorporated zinc oxide (ZnO) film is deposited on a slide glass substrate by ultrasonic spray pyrolysis. A nanoflower consisting of a hexagonal nanopetal is formed on the surfaces of the samples, and the sizes of the nanopetal are approximately 200 to 700 nm. Additionally, the nanopetal becomes blunted with an increasing incorporated amount of YAG. As the incorporated amount is 1.5 and 2.5 wt.%, the photoluminescence color of the YAG-incorporated ZnO film is nearly white, possibly contributing to the YAG emission and the band-to-deep level transition in the ZnO film.
We reported well-integrated zinc oxide (ZnO) nanorod arrays (NRAs) on conductive textiles (CTs) and their structural and optical properties. The integrated ZnO NRAs were synthesized by cathodic electrochemical deposition on the ZnO seed layer-coated CT substrate in ultrasonic bath. The ZnO NRAs were regularly and densely grown as well as vertically aligned on the overall surface of CT substrate, in comparison with the grown ZnO NRAs without ZnO seed layer or ultrasonication. Additionally, their morphologies and sizes can be efficiently controlled by changing the external cathodic voltage between the ZnO seed-coated CT substrate and the counter electrode. At an external cathodic voltage of -2 V, the photoluminescence property of ZnO NRAs was optimized with good crystallinity and high density.
Nanoparticles are very interesting because of their surface properties, different from bulk materials. Such properties make possible to endow ordinary products with new functionalities. Their relatively low cost with respect to other nano-additives make them a promising choice for industrial mass-production systems. Nanoparticles of different kind of materials such as silver, titania, and zinc oxide have been used in the functionalization of fibers and fabrics achieving significantly improved products with new macroscopic properties. This article reviews the most relevant approaches for incorporating such nanoparticles into synthetic fibers used traditionally in the textile industry allowing to give a solution to traditional problems for textiles such as the microorganism growth onto fibers, flammability, robustness against ultraviolet radiation, and many others. In addition, the incorporation of such nanoparticles into special ultrathin fibers is also analyzed. In this field, electrospinning is a very promising technique that allows the fabrication of ultrathin fiber mats with an extraordinary control of their structure and properties, being an ideal alternative for applications such as wound healing or even functional membranes.
- Proceedings of the National Academy of Sciences of the United States of America
- Published about 5 years ago
A 2D metastable carbon allotrope, penta-graphene, composed entirely of carbon pentagons and resembling the Cairo pentagonal tiling, is proposed. State-of-the-art theoretical calculations confirm that the new carbon polymorph is not only dynamically and mechanically stable, but also can withstand temperatures as high as 1000 K. Due to its unique atomic configuration, penta-graphene has an unusual negative Poisson’s ratio and ultrahigh ideal strength that can even outperform graphene. Furthermore, unlike graphene that needs to be functionalized for opening a band gap, penta-graphene possesses an intrinsic quasi-direct band gap as large as 3.25 eV, close to that of ZnO and GaN. Equally important, penta-graphene can be exfoliated from T12-carbon. When rolled up, it can form pentagon-based nanotubes which are semiconducting, regardless of their chirality. When stacked in different patterns, stable 3D twin structures of T12-carbon are generated with band gaps even larger than that of T12-carbon. The versatility of penta-graphene and its derivatives are expected to have broad applications in nanoelectronics and nanomechanics.