Concept: Anwell Technologies Limited
We demonstrate four- and two-terminal perovskite-perovskite tandem solar cells with ideally matched band gaps. We develop an infrared-absorbing 1.2-electron volt band-gap perovskite, FA0.75Cs0.25Sn0.5Pb0.5I3, that can deliver 14.8% efficiency. By combining this material with a wider-band gap FA0.83Cs0.17Pb(I0.5Br0.5)3 material, we achieve monolithic two-terminal tandem efficiencies of 17.0% with >1.65-volt open-circuit voltage. We also make mechanically stacked four-terminal tandem cells and obtain 20.3% efficiency. Notably, we find that our infrared-absorbing perovskite cells exhibit excellent thermal and atmospheric stability, not previously achieved for Sn-based perovskites. This device architecture and materials set will enable “all-perovskite” thin-film solar cells to reach the highest efficiencies in the long term at the lowest costs.
Quasi-random nanostructures have attracted significant interests for photon management purposes. To optimize such patterns, typically very expensive fabrication processes are needed to create the pre-designed, subwavelength nanostructures. While quasi-random photonic nanostructures are abundant in nature (for example, in structural coloration), interestingly, they also exist in Blu-ray movie discs, an already mass-produced consumer product. Here we uncover that Blu-ray disc patterns are surprisingly well suited for light-trapping applications. While the algorithms in the Blu-ray industrial standard were developed with the intention of optimizing data compression and error tolerance, they have also created quasi-random arrangement of islands and pits on the final media discs that are nearly optimized for photon management over the solar spectrum, regardless of the information stored on the discs. As a proof-of-concept, imprinting polymer solar cells with the Blu-ray patterns indeed increases their efficiencies. Simulation suggests that Blu-ray patterns could be broadly applied for solar cells made of other materials.
Recently, liquid phase crystallization of thin silicon films has emerged as a candidate for thin-film photovoltaics. On 10 μm thin absorbers, wafer-equivalent morphologies and open-circuit voltages were reached, leading to 13.2% record efficiency. However, short-circuit current densities are still limited, mainly due to optical losses at the glass-silicon interface. While nano-structures at this interface have been shown to efficiently reduce reflection, up to now these textures caused a deterioration of electronic silicon material quality. Therefore, optical gains were mitigated due to recombination losses. Here, the SMooth Anti-Reflective Three-dimensional (SMART) texture is introduced to overcome this trade-off. By smoothing nanoimprinted SiO x nano-pillar arrays with spin-coated TiO x layers, light in-coupling into laser-crystallized silicon solar cells is significantly improved as successfully demonstrated in three-dimensional simulations and in experiment. At the same time, electronic silicon material quality is equivalent to that of planar references, allowing to reach V oc values above 630 mV. Furthermore, the short-circuit current density could be increased from 21.0 mA cm(-2) for planar reference cells to 24.5 mA cm(-2) on SMART textures, a relative increase of 18%. External quantum efficiency measurements yield an increase for wavelengths up to 700 nm compared to a state-of-the-art solar cell with 11.9% efficiency, corresponding to a j sc, EQE gain of 2.8 mA cm(-2).
Three-dimensional organic-inorganic perovskites have emerged as one of the most promising thin-film solar cell materials owing to their remarkable photophysical properties, which have led to power conversion efficiencies exceeding 20 per cent, with the prospect of further improvements towards the Shockley-Queisser limit for a single-junction solar cell (33.5 per cent). Besides efficiency, another critical factor for photovoltaics and other optoelectronic applications is environmental stability and photostability under operating conditions. In contrast to their three-dimensional counterparts, Ruddlesden-Popper phases-layered two-dimensional perovskite films-have shown promising stability, but poor efficiency at only 4.73 per cent. This relatively poor efficiency is attributed to the inhibition of out-of-plane charge transport by the organic cations, which act like insulating spacing layers between the conducting inorganic slabs. Here we overcome this issue in layered perovskites by producing thin films of near-single-crystalline quality, in which the crystallographic planes of the inorganic perovskite component have a strongly preferential out-of-plane alignment with respect to the contacts in planar solar cells to facilitate efficient charge transport. We report a photovoltaic efficiency of 12.52 per cent with no hysteresis, and the devices exhibit greatly improved stability in comparison to their three-dimensional counterparts when subjected to light, humidity and heat stress tests. Unencapsulated two-dimensional perovskite devices retain over 60 per cent of their efficiency for over 2,250 hours under constant, standard (AM1.5G) illumination, and exhibit greater tolerance to 65 per cent relative humidity than do three-dimensional equivalents. When the devices are encapsulated, the layered devices do not show any degradation under constant AM1.5G illumination or humidity. We anticipate that these results will lead to the growth of single-crystalline, solution-processed, layered, hybrid, perovskite thin films, which are essential for high-performance opto-electronic devices with technologically relevant long-term stability.
A metal-organic hybrid perovskite (CH3NH3PbI3) with three-dimensional framework of metal-halide octahedra has been reported as a low-cost, solution-processable absorber for a thin-film solar cell with a power-conversion efficiency over 20%. Low-dimensional layered perovskites with metal halide slabs separated by the insulating organic layers are reported to show higher stability, but the efficiencies of the solar cells are limited by the confinement of excitons. In order to explore the confinement and transport of excitons in zero-dimensional metal-organic hybrid materials, a highly orientated film of (CH3NH3)3Bi2I9 with nanometre-sized core clusters of Bi2I9(3-) surrounded by insulating CH3NH3(+) was prepared via solution processing. The (CH3NH3)3Bi2I9 film shows highly anisotropic photoluminescence emission and excitation due to the large proportion of localised excitons coupled with delocalised excitons from intercluster energy transfer. The abrupt increase in photoluminescence quantum yield at excitation energy above twice band gap could indicate a quantum cutting due to the low dimensionality.Understanding the confinement and transport of excitons in low dimensional systems will aid the development of next generation photovoltaics. Via photophysical studies Ni et al. observe ‘quantum cutting’ in 0D metal-organic hybrid materials based on methylammonium bismuth halide (CH3NH3)3Bi2I9.
A major bottleneck delaying the further commercialization of thin-film solar cells based on hybrid organohalide lead perovskites is the interface losses in state-of-the-art devices. We present a generic interface architecture that combines solution-processed, reliable, and cost-efficient hole-transporting materials, without compromising efficiency, stability or scalability of perovskite solar cells. Tantalum doped tungsten oxide (Ta-WO x )/conjugated polymer multilayers offer a surprisingly small interface barrier and form quasi-ohmic contacts universally with various scalable conjugated polymers. Using a simple regular planar architecture device, Ta-WO x doped interface-based perovskite solar cells achieve maximum efficiencies of 21.2% and combined with over 1000 hours of light stability based on a self-assembled monolayer. By eliminating additional ionic dopants, these findings open up the whole class of organics as scalable hole-transporting materials for perovskite solar cells.
Herein, we theoretically and experimentally investigated the mechanisms of charge separation processes of organic thin-film solar cells. PTB7, PTB1, and PTBF2 have been chosen as donors and PC71BM has been chosen as an acceptor considering that effective charge generation depends on the difference between the material combinations. Experimental results of transient absorption spectroscopy show that the hot process is a key step for determining external quantum efficiency (EQE) in these systems. From the quantum chemistry calculations, it has been found that EQE tends to increase as the transferred charge, charge transfer distance, and variation of dipole moments between the ground and excited states of the donor/acceptor complexes increase; this indicates that these physical quantities are a good descriptor to assess the donor-acceptor charge transfer quality contributing to the solar cell performance. We propose that designing donor/acceptor interfaces with large values of charge transfer distance and variation of dipole moments of the donor/acceptor complexes is a prerequisite for developing high-efficiency polymer/PCBM solar cells.
Development of Cd-free Cu(In,Ga)(S,Se)2(CIGSSe)-based thin-film solar cells fabricated by all dry process is significantly intriguing to minimize optical loss at a wavelength shorter than 520 nm owing to absorption of CdS buffer layer and to be easily integrated into an in-line process for cost reduction. Cd-free CIGSSe solar cells are therefore prepared by the dry process with a structure of Zn0.9Mg0.1O:Al/Zn0.8Mg0.2O/CIGSSe/Mo/Glass. It is demonstrated that Zn0.8Mg0.2O and Zn0.9Mg0.1O:Al are appropriate as buffer and transparent conductive oxide layers with large optical band-gap energy values of 3.75 and 3.80 eV, respectively. The conversion efficiency ( η) of the Cd-free CIGSSe solar cell without K-treatment is thus increased to 18.1%. To further increase the η, the Cd-free CIGSSe solar cell with K-treatment is next fabricated and followed by post treatment called HLS+LS process, including heat-light soaking (HLS) at 110oC and light soaking (LS) under AM 1.5G illumination. It is disclosed that the HLS+LS process gives rise to not only the enhanced carrier density but also the decrease in the carrier recombination rate at the buffer/absorber interface. Ultimately, the η of the Cd-free CIGSSe solar cell with K-treatment prepared by all dry process is enhanced to the level of 20.0%.
Knowledge of band alignments and heterostructure formations is fundamental for a new generation of optoelectronics based on two-dimensional layered materials. Herein, band alignments and heterostructures of IVB-VIA monolayer MX3 (M = Zr, Hf; X = S, Se) and VIIB-VIA monolayer MX2 (M = Tc, Re; X = S, Se) are calculated by density functional theory with hybrid functionals. The results indicate that for monolayer MX3, the valence bands mainly depend on the p state of the chalcogens and the conduction bands mainly depend on the d state of the transition metals. In contrast, for monolayer MX2, both valence and conduction bands depend on the d state of the transition metals. This suggests that their work functions are obviously different. Meanwhile, the characteristics of the band alignments and the planar-averaged local density of states show that ZrS3, HfS3, TcSe2 and ReS2 could be favorable candidates for photocatalytic water splitting. ZrS3, HfS3 and MX2 with the same structures are able to form type II heterostructures at their interfaces, which could be used for solar energy conversion. The power-conversion efficiency of an MX3 thin-film solar cell is approximately 16-18%, which is higher than those of MX2 thin-film solar cells. In addition, for heterostructures composed of MX3, both of the two kinds of material (M and X) play an important role in every band formation. Meanwhile, for MX2 heterostructures, almost every band depends only on a single material. The charge density difference of the heterostructures demonstrates a higher charge accumulation at the interface of MX3 heterostructures than that of MX2 heterostructures. These phenomena show that type II heterostructures formed of MX3 are more stable than those of MX2.
In the original manuscript, the maximum short-circuit current in Fig. 2 and the description of angular stability for polarization in Fig. 6 are found incorrect owing to negligence. The incorrect maximum integrated absorption also led to errors appeared in Fig. 3 and Fig. 4(d), in which the mistake value was used to plot. In this erratum, all of those mistakes have been corrected. Moreover, both higher Fourier expansion order and the resolution of frequency are adopted in the recalculation to make sure the updated results to be reliable. The updated data presented still support the main conclusions drawn in the previous manuscript.