Galvanic-Cell-Reaction-Driven Deposition of Large-Area Au Nanourchin Arrays for Surface-Enhanced Raman Scattering
OPEN Nanomaterials (Basel, Switzerland) | 25 Apr 2018
Z Li, K Sun, Z Du, B Chen and X He
Here we report a low-cost synthetic approach for the direct fabrication of large-area Au nanourchin arrays on indium tin oxide (ITO) via a facile galvanic-cell-reaction-driven deposition in an aqueous solution of chloroauric acid and poly(vinyl pyrrolidone) (PVP). The homogeneous Au nanourchins are composed of abundant sharp nanotips, which can served as nanoantennas and increase the local electromagnetic field enhancement dramatically. Finite element theoretical calculations confirm the strong electromagnetic field can be created around the sharp nanotips and located in the nanogaps between adjacent tips of the Au nanourchins. In addition, the interparticle nanogaps between the neighboring Au nanourchins may create additional hotspots, which can induce the higher electromagnetic field intensity. By using rhodamine 6G as a test molecule, the large-area Au nanourchin arrays on ITO exhibit active, uniform, and reproducible surface-enhanced Raman scattering (SERS) effect. To trial their practical application, the Au nanourchin arrays are utilized as SERS substrates to detect 3,3’,4,4’-tetrachlorobiphenyl (PCB-77) one congener of polychlorinated biphenyls (PCBs) as a notorious class of persistent organic pollutants. The characteristic Raman peaks can be still identified when the concentration of PCB-77 is down to 5 × 10−6 M.
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