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M Li, M Zheng, T Zhou, C Li, L Ma and W Shen
Abstract
Ordered CuIn(1 - x)GaxSe2 (CIGS) nanopore films were prepared by one-step electrodeposition based on porous anodized aluminum oxide templates. The as-grown film shows a highly ordered morphology that reproduces the surface pattern of the substrate. Raman spectroscopy and X-ray diffraction pattern show that CIGS nanopore films had ideal chalcopyrite crystallization. Energy dispersive spectroscopy reveals the Cu-Se phases firstly formed in initial stage of growth. Then, indium and gallium were incorporated in the nanopore films in succession. Cu-Se phase is most likely to act as a growth promoter in the growth progress of CIGS nanopore films. Due to the high surface area and porous structure, this kind of CIGS films could have potential application in light-trapping CIGS solar cells and photo electrochemical water splitting.
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Concepts
Hydrogen, DNA, Spectroscopy, Electromagnetic radiation, Copper indium gallium selenide, X-ray crystallography, Diffraction, X-ray
MeSH headings
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